STD80N4F6

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STD80N4F6

EXSHINE Part Number:EX-STD80N4F6
Manufacturer Part Number:STD80N4F6
Manufacturer / Brand:STMicroelectronics
Brief Description:MOSFET N-CH 40V 80A DPAK
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:1
Datasheet Download:STD80N4F6
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
STD80N4F6
In stock: 30988000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 1.82

Reference Marketing Price: US$ 1.82

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$1.82
10+:
$1.634
100+:
$1.313
500+:
$1.079
1000+:
$0.894
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Product Parameter

Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package DPAK
Series DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs 6 mOhm @ 40A, 10V
Power Dissipation (Max) 70W (Tc)
Packaging Original-Reel®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names 497-13576-6
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number STD80N4F6
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 40V 80A (Tc) 70W (Tc) Surface Mount DPAK
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 40V
Description MOSFET N-CH 40V 80A DPAK
Current - Continuous Drain (Id) @ 25°C 80A (Tc)

Others

Other Names 497-13576-6
Standard Package 1

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Distributor of STMicroelectronics

- STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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