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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STW56N65M2-4
STW56N65M2-4

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STW56N65M2-4

EXSHINE Part Number:EX-STW56N65M2-4
Manufacturer Part Number:STW56N65M2-4
Manufacturer / Brand:STMicroelectronics
Brief Description:MOSFET N-CH 650V I2PAKFP
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:1
Datasheet Download:STW56N65M2-4
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
STW56N65M2-4
In stock: 74920 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order STW56N65M2-4 online

US$ 8.16

Reference Marketing Price: US$ 8.16

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$8.16
10+:
$7.371
100+:
$6.102
500+:
$5.314
1000+:
$4.628
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Product Parameter

Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247-4L
Series MDmesh™ M2
Rds On (Max) @ Id, Vgs 62 mOhm @ 24.5A, 10V
Power Dissipation (Max) 358W (Tc)
Packaging Tube
Package / Case TO-247-4
Other Names 497-15373-5
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 22 Weeks
Manufacturer Part Number STW56N65M2-4
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247-4L
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Description MOSFET N-CH 650V I2PAKFP
Current - Continuous Drain (Id) @ 25°C 49A (Tc)

Others

Other Names 497-15373-5
Standard Package 30

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