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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > HN1A01F-GR(TE85L,F
HN1A01F-GR(TE85L,F

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HN1A01F-GR(TE85L,F

EXSHINE Part Number:EX-HN1A01F-GR(TE85L,F
Manufacturer Part Number:HN1A01F-GR(TE85L,F
Manufacturer / Brand:Toshiba Semiconductor and Storage
Brief Description:TRANS 2PNP 50V 0.15A SM6
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:HN1A01F
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
HN1A01F-GR(TE85L,F
In stock: 11348 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Transistor Type 2 PNP (Dual)
Supplier Device Package SM6
Series -
Power - Max 300mW
Packaging Original-Reel®
Package / Case SC-74, SOT-457
Other Names HN1A01F-GR(TE85LFDKR
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number HN1A01F-GR(TE85L,F
Frequency - Transition 80MHz
Expanded Description Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 300mW Surface Mount SM6
Description TRANS 2PNP 50V 0.15A SM6
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

Others

Standard Package 1
Other Names HN1A01F-GR(TE85LFDKR

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