HN1C01FU-GR,LF

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HN1C01FU-GR,LF

EXSHINE Part Number:EX-HN1C01FU-GR,LF
Manufacturer Part Number:HN1C01FU-GR,LF
Manufacturer / Brand:Toshiba Semiconductor and Storage
Brief Description:TRANS 2NPN 50V 0.15A US6
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:HN1C01FU
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
HN1C01FU-GR,LF
In stock: 40391 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transistor Type 2 NPN (Dual)
Supplier Device Package US6
Series -
Power - Max 200mW
Packaging Original-Reel®
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names HN1C01FU-GRLFDKR
HN1C01FUGRLFTDKR
HN1C01FUGRLFTDKR-ND
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number HN1C01FU-GR,LF
Frequency - Transition 80MHz
Expanded Description Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 200mW Surface Mount US6
Description TRANS 2NPN 50V 0.15A US6
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

Others

Standard Package 1
Other Names HN1C01FU-GRLFDKR

HN1C01FUGRLFTDKR

HN1C01FUGRLFTDKR-ND

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- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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