RN1701JE(TE85L,F)

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RN1701JE(TE85L,F)

EXSHINE Part Number:EX-RN1701JE(TE85L,F)
Manufacturer Part Number:RN1701JE(TE85L,F)
Manufacturer / Brand:Toshiba Semiconductor and Storage
Brief Description:TRANS 2NPN PREBIAS 0.1W ESV
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:RN1701JE-06JE
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
RN1701JE(TE85L,F)
In stock: 47627000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order RN1701JE(TE85L,F) online

US$ 0.088

Reference Marketing Price: US$ 0.088

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

4000+:
$0.088
8000+:
$0.079
12000+:
$0.071
28000+:
$0.066
65535+:
$0.057
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Supplier Device Package ESV
Series -
Resistor - Emitter Base (R2) (Ohms) 4.7k
Resistor - Base (R1) (Ohms) 4.7k
Power - Max 100mW
Packaging Tape & Reel (TR)
Package / Case SOT-553
Other Names RN1701JE(TE85LF)TR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number RN1701JE(TE85L,F)
Frequency - Transition 250MHz
Expanded Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV
Description TRANS 2NPN PREBIAS 0.1W ESV
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

Others

Standard Package 4,000
Other Names RN1701JE(TE85LF)TR

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Distributor of Toshiba Semiconductor and Storage

- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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