RN1961FE(TE85L,F)

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RN1961FE(TE85L,F)

EXSHINE Part Number:EX-RN1961FE(TE85L,F)
Manufacturer Part Number:RN1961FE(TE85L,F)
Manufacturer / Brand:Toshiba Semiconductor and Storage
Brief Description:TRANS 2NPN PREBIAS 0.1W ES6
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:RN1961-66FE
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
RN1961FE(TE85L,F)
In stock: 58131000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 0.41

Reference Marketing Price: US$ 0.41

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$0.41
10+:
$0.373
25+:
$0.269
100+:
$0.209
250+:
$0.131
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) (Ohms) 4.7k
Resistor - Base (R1) (Ohms) 4.7k
Power - Max 100mW
Packaging Cut Tape (CT)
Package / Case SOT-563, SOT-666
Other Names RN1961FE(TE85LF)CT
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number RN1961FE(TE85L,F)
Frequency - Transition 250MHz
Expanded Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Description TRANS 2NPN PREBIAS 0.1W ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

Others

Other Names RN1961FE(TE85LF)CT
Standard Package 1

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Distributor of Toshiba Semiconductor and Storage

- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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