TK39N60W5,S1VF

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TK39N60W5,S1VF

EXSHINE Part Number:EX-TK39N60W5,S1VF
Manufacturer Part Number:TK39N60W5,S1VF
Manufacturer / Brand:Toshiba Semiconductor and Storage
Brief Description:MOSFET N-CH 600V 38.8A T0247
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:TK39N60W5
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
TK39N60W5,S1VF
In stock: 16660 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 6.67

Reference Marketing Price: US$ 6.67

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Multiples:1

1+:
$6.67
10+:
$6.005
30+:
$5.472
120+:
$4.938
270+:
$4.537
510+:
$4.137
1020+:
$3.603
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Product Parameter

Vgs(th) (Max) @ Id 4.5V @ 1.9mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247
Series DTMOSIV
Rds On (Max) @ Id, Vgs 74 mOhm @ 19.4A, 10V
Power Dissipation (Max) 270W (Tc)
Packaging Tube
Package / Case TO-247-3
Other Names TK39N60W5,S1VF(S
TK39N60W5S1VF
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Manufacturer Part Number TK39N60W5,S1VF
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-247
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Description MOSFET N-CH 600V 38.8A T0247
Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)

Others

Standard Package 30
Other Names TK39N60W5,S1VF(S

TK39N60W5S1VF

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- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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