TPD3215M

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TPD3215M

EXSHINE Part Number:EX-TPD3215M
Manufacturer Part Number:TPD3215M
Manufacturer / Brand:Transphorm
Brief Description:CASCODE GAN HB 600V 70A MODULE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:TPD3215M
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
TPD3215M
In stock: 9690 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 187.77

Reference Marketing Price: US$ 187.77

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$187.77
10+:
$178.705
25+:
$172.23
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Product Parameter

Vgs(th) (Max) @ Id -
Supplier Device Package Module
Series -
Rds On (Max) @ Id, Vgs 34 mOhm @ 30A, 8V
Power - Max 470W
Packaging Bulk
Package / Case Module
Other Names TPH3215M
TPH3215M-ND
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
Manufacturer Part Number TPD3215M
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 8V
FET Type GaNFET N-Channel, Gallium Nitride
FET Feature Standard
Expanded Description Mosfet Array GaNFET N-Channel, Gallium Nitride 600V 70A (Tc) 470W Through Hole Module
Drain to Source Voltage (Vdss) 600V
Description CASCODE GAN HB 600V 70A MODULE
Current - Continuous Drain (Id) @ 25°C 70A (Tc)

Others

Other Names TPH3215M

TPH3215M-ND
Standard Package 1

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Distributor of Transphorm

- Transphorm is a global semiconductor company that develops gallium nitride (GaN) FETs for high-voltage power conversion applications. Built on an industry-leading IP portfolio and over 300 years of combined GaN engineering expertise, Transphorm is delivering the highest performance and highest reliability GaN devices and best-in-class applications-driven design support to a growing customer base. Transphorm is creating innovations that move beyond the limitations of silicon to capture 90% of today’s energy losses.

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