TPH3202LD

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TPH3202LD

EXSHINE Part Number:EX-TPH3202LD
Manufacturer Part Number:TPH3202LD
Manufacturer / Brand:Transphorm
Brief Description:GAN FET 600V 9A PQFN88
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:TPH3202LD
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
TPH3202LD
In stock: 79330 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order TPH3202LD online

US$ 10.61

Reference Marketing Price: US$ 10.61

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$10.61
10+:
$9.545
25+:
$8.696
100+:
$7.848
250+:
$7.211
500+:
$6.575
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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±18V
Technology GaNFET (Gallium Nitride)
Supplier Device Package PQFN (8x8)
Series -
Rds On (Max) @ Id, Vgs 350 mOhm @ 5.5A, 8V
Power Dissipation (Max) 65W (Tc)
Packaging Tube
Package / Case 4-PowerDFN
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Manufacturer Standard Lead Time 14 Weeks
Manufacturer Part Number TPH3202LD
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 480V
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 600V 9A (Tc) 65W (Tc) Surface Mount PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On) -
Drain to Source Voltage (Vdss) 600V
Description GAN FET 600V 9A PQFN88
Current - Continuous Drain (Id) @ 25°C 9A (Tc)

Others

Standard Package 60

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 Delivery time: 1-3 days.
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Distributor of Transphorm

- Transphorm is a global semiconductor company that develops gallium nitride (GaN) FETs for high-voltage power conversion applications. Built on an industry-leading IP portfolio and over 300 years of combined GaN engineering expertise, Transphorm is delivering the highest performance and highest reliability GaN devices and best-in-class applications-driven design support to a growing customer base. Transphorm is creating innovations that move beyond the limitations of silicon to capture 90% of today’s energy losses.

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