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TPH3212PS
| EXSHINE Part Number: | EX-TPH3212PS |
|---|---|
| Manufacturer Part Number: | TPH3212PS |
| Manufacturer / Brand: | Transphorm |
| Brief Description: | GAN FET 650V 27A TO220 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | TPH3212PS |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
TPH3212PS
In stock: 45970 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 45970 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
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- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 2.6V @ 400uA |
|---|---|
| Vgs (Max) | ±18V |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | TO-220 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 72 mOhm @ 17A, 8V |
| Power Dissipation (Max) | 104W (Tc) |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 14 Weeks |
| Manufacturer Part Number | TPH3212PS |
| Input Capacitance (Ciss) (Max) @ Vds | 1130pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 8V |
| FET Type | N-Channel |
| FET Feature | - |
| Expanded Description | N-Channel 650V 27A (Tc) 104W (Tc) Through Hole TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Drain to Source Voltage (Vdss) | 650V |
| Description | GAN FET 650V 27A TO220 |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
Others
| Standard Package | 50 |
|---|
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FEDEX EXPRESS Delivery time: 1-3 days. |
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UPS EXPRESS Delivery time: 2-4 days. |
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TNT EXPRESS Delivery time: 3-6 days. |
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EMS EXPRESS Delivery time: 7-10 days. |
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Distributor of Transphorm
- Transphorm is a global semiconductor company that develops gallium nitride (GaN) FETs for high-voltage power conversion applications. Built on an industry-leading IP portfolio and over 300 years of combined GaN engineering expertise, Transphorm is delivering the highest performance and highest reliability GaN devices and best-in-class applications-driven design support to a growing customer base. Transphorm is creating innovations that move beyond the limitations of silicon to capture 90% of today’s energy losses.