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SI3460DDV-T1-GE3
| EXSHINE Part Number: | EX-SI3460DDV-T1-GE3 |
|---|---|
| Manufacturer Part Number: | SI3460DDV-T1-GE3 |
| Manufacturer / Brand: | Vishay / Siliconix |
| Brief Description: | MOSFET N-CH 20V 7.9A 6-TSOP |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | SI3460DDV |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
SI3460DDV-T1-GE3
In stock: 57227000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 57227000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
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Product Parameter
| Vgs(th) (Max) @ Id | 1V @ 250µA |
|---|---|
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 6-TSOP |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 5.1A, 4.5V |
| Power Dissipation (Max) | 1.7W (Ta), 2.7W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Other Names | SI3460DDV-T1-GE3TR SI3460DDVT1GE3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 24 Weeks |
| Manufacturer Part Number | SI3460DDV-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | 666pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 8V |
| FET Type | N-Channel |
| FET Feature | - |
| Expanded Description | N-Channel 20V 7.9A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Description | MOSFET N-CH 20V 7.9A 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Tc) |
Others
| Other Names | SI3460DDV-T1-GE3TR SI3460DDVT1GE3 |
|---|---|
| Standard Package | 3,000 |
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