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SI3585DV-T1-GE3
| EXSHINE Part Number: | EX-SI3585DV-T1-GE3 |
|---|---|
| Manufacturer Part Number: | SI3585DV-T1-GE3 |
| Manufacturer / Brand: | Vishay / Siliconix |
| Brief Description: | MOSFET N/P-CH 20V 2A 6-TSOP |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | SI3585DV |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
SI3585DV-T1-GE3
In stock: 82954000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 82954000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
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- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
|---|---|
| Supplier Device Package | 6-TSOP |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 2.4A, 4.5V |
| Power - Max | 830mW |
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Other Names | SI3585DV-T1-GE3CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | SI3585DV-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Expanded Description | Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP |
| Drain to Source Voltage (Vdss) | 20V |
| Description | MOSFET N/P-CH 20V 2A 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C | 2A, 1.5A |
Others
| Other Names | SI3585DV-T1-GE3CT |
|---|---|
| Standard Package | 1 |
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FEDEX EXPRESS Delivery time: 1-3 days. |
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TNT EXPRESS Delivery time: 3-6 days. |
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EMS EXPRESS Delivery time: 7-10 days. |
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