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SI5855DC-T1-E3
| EXSHINE Part Number: | EX-SI5855DC-T1-E3 |
|---|---|
| Manufacturer Part Number: | SI5855DC-T1-E3 |
| Manufacturer / Brand: | Vishay / Siliconix |
| Brief Description: | MOSFET P-CH 20V 2.7A 1206-8 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | SI5855DC |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
SI5855DC-T1-E3
In stock: 26107 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 26107 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
- Description
- Payment
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- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 1V @ 250µA |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 2.7A, 4.5V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Lead |
| Other Names | SI5855DC-T1-E3TR SI5855DCT1E3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | SI5855DC-T1-E3 |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
| FET Type | P-Channel |
| FET Feature | Schottky Diode (Isolated) |
| Expanded Description | P-Channel 20V 2.7A (Ta) 1.1W (Ta) Surface Mount 1206-8 ChipFET™ |
| Drain to Source Voltage (Vdss) | 20V |
| Description | MOSFET P-CH 20V 2.7A 1206-8 |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
Others
| Other Names | SI5855DC-T1-E3TR SI5855DCT1E3 |
|---|---|
| Standard Package | 3,000 |
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EMS EXPRESS Delivery time: 7-10 days. |
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