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SI5858DU-T1-GE3
| EXSHINE Part Number: | EX-SI5858DU-T1-GE3 |
|---|---|
| Manufacturer Part Number: | SI5858DU-T1-GE3 |
| Manufacturer / Brand: | Vishay / Siliconix |
| Brief Description: | MOSFET N-CH 20V 6A PPAK CHIPFET |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | SI5858DU |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
SI5858DU-T1-GE3
In stock: 79243 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 79243 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
- Description
- Payment
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- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 1V @ 250µA |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® ChipFet Dual |
| Series | LITTLE FOOT® |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 4.4A, 4.5V |
| Power Dissipation (Max) | 2.3W (Ta), 8.3W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | SI5858DU-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
| FET Type | N-Channel |
| FET Feature | Schottky Diode (Isolated) |
| Expanded Description | N-Channel 20V 6A (Tc) 2.3W (Ta), 8.3W (Tc) Surface Mount PowerPAK® ChipFet Dual |
| Drain to Source Voltage (Vdss) | 20V |
| Description | MOSFET N-CH 20V 6A PPAK CHIPFET |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Others
| Standard Package | 3,000 |
|---|
You can choose the below payment options. Please contact our sales team if you have any questions.
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DHL EXPRESS Delivery time: 1-3 days. |
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FEDEX EXPRESS Delivery time: 1-3 days. |
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UPS EXPRESS Delivery time: 2-4 days. |
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TNT EXPRESS Delivery time: 3-6 days. |
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EMS EXPRESS Delivery time: 7-10 days. |
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