SI7101DN-T1-GE3

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SI7101DN-T1-GE3

EXSHINE Part Number:EX-SI7101DN-T1-GE3
Manufacturer Part Number:SI7101DN-T1-GE3
Manufacturer / Brand:Vishay / Siliconix
Brief Description:MOSFET P-CH 30V 35A PPAK 1212-8
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:SI7101DN
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
SI7101DN-T1-GE3
In stock: 74464000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 0.529

Reference Marketing Price: US$ 0.529

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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® 1212-8
Series TrenchFET®
Rds On (Max) @ Id, Vgs 7.2 mOhm @ 15A, 10V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Packaging Tape & Reel (TR)
Package / Case PowerPAK® 1212-8
Other Names SI7101DN-T1-GE3TR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 17 Weeks
Manufacturer Part Number SI7101DN-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds 3595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
FET Type P-Channel
FET Feature -
Expanded Description P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V
Description MOSFET P-CH 30V 35A PPAK 1212-8
Current - Continuous Drain (Id) @ 25°C 35A (Tc)

Others

Other Names SI7101DN-T1-GE3TR
Standard Package 3,000

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Distributor of Vishay Siliconix

- Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Vishay is proud to be a major partner with exshinetech.com.

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