SIHB23N60E-GE3

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SIHB23N60E-GE3

EXSHINE Part Number:EX-SIHB23N60E-GE3
Manufacturer Part Number:SIHB23N60E-GE3
Manufacturer / Brand:Vishay / Siliconix
Brief Description:MOSFET N-CH 600V 23A D2PAK
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:SIHB23N60E-GE3
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
SIHB23N60E-GE3
In stock: 87460 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 1.975

Reference Marketing Price: US$ 1.975

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Multiples:1

1000+:
$1.975
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Product Parameter

Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263)
Series -
Rds On (Max) @ Id, Vgs 158 mOhm @ 12A, 10V
Power Dissipation (Max) 227W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 19 Weeks
Manufacturer Part Number SIHB23N60E-GE3
Input Capacitance (Ciss) (Max) @ Vds 2418pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 600V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
Drain to Source Voltage (Vdss) 600V
Description MOSFET N-CH 600V 23A D2PAK
Current - Continuous Drain (Id) @ 25°C 23A (Tc)

Others

Standard Package 1,000

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Distributor of Vishay Siliconix

- Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Vishay is proud to be a major partner with exshinetech.com.

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