EPC9002C

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EPC9002C

EXSHINE Part Number:EX-EPC9002C
Manufacturer Part Number:EPC9002C
Manufacturer / Brand:EPC
Brief Description:BOARD DEV FOR EPC2001C 100V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2001C Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC9002C
In stock: 85190 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC9002C online

US$ 90

Reference Marketing Price: US$ 90

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$90.00
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Product Parameter

Utilized IC / Part EPC2001C
Supplied Contents Board
Series eGaN®
Secondary Attributes -
Primary Attributes -
Other Names 917-1127
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number EPC9002C
Main Purpose Power Management
Expanded Description EPC2001C eGaN® Series Power Management Evaluation Board
Embedded -
Description BOARD DEV FOR EPC2001C 100V

Others

Standard Package 1
Other Names 917-1127

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

 Paypal
 Receiving: immediately.

 Western Union
 Receiving: 1-2 hours.

 MoneyGram
 Receiving: 1-2 hours.

 Alipay
 Receiving: immediately.

You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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