GP1M018A020CG

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GP1M018A020CG

EXSHINE Part Number:EX-GP1M018A020CG
Manufacturer Part Number:GP1M018A020CG
Manufacturer / Brand:Global Power Technologies Group
Brief Description:MOSFET N-CH 200V 18A DPAK
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:GP1M018A020CG, PG
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
GP1M018A020CG
In stock: 79555000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 0.27

Reference Marketing Price: US$ 0.27

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Multiples:1

5000+:
$0.27
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Product Parameter

Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package D-Pak
Series -
Rds On (Max) @ Id, Vgs 170 mOhm @ 9A, 10V
Power Dissipation (Max) 94W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number GP1M018A020CG
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 200V 18A (Tc) 94W (Tc) Surface Mount D-Pak
Drain to Source Voltage (Vdss) 200V
Description MOSFET N-CH 200V 18A DPAK
Current - Continuous Drain (Id) @ 25°C 18A (Tc)

Others

Standard Package 5,000

You can choose the below payment options. Please contact our sales team if you have any questions.

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Distributor of Global Power Technologies Group

- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.

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