GP1M020A060N

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GP1M020A060N

EXSHINE Part Number:EX-GP1M020A060N
Manufacturer Part Number:GP1M020A060N
Manufacturer / Brand:Global Power Technologies Group
Brief Description:MOSFET N-CH 600V 20A TO3PN
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:GP1M020A060N
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
GP1M020A060N
In stock: 68800 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order GP1M020A060N online

US$ 1.918

Reference Marketing Price: US$ 1.918

Our Best Price: N/A (Email us)

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Multiples:1

1800+:
$1.918
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Product Parameter

Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PN
Series -
Rds On (Max) @ Id, Vgs 330 mOhm @ 10A, 10V
Power Dissipation (Max) 347W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number GP1M020A060N
Input Capacitance (Ciss) (Max) @ Vds 2097pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 600V 20A (Tc) 347W (Tc) Through Hole TO-3PN
Drain to Source Voltage (Vdss) 600V
Description MOSFET N-CH 600V 20A TO3PN
Current - Continuous Drain (Id) @ 25°C 20A (Tc)

Others

Standard Package 1,800

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Distributor of Global Power Technologies Group

- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.

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