IXDP20N60B

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IXDP20N60B

EXSHINE Part Number:EX-IXDP20N60B
Manufacturer Part Number:IXDP20N60B
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 600V 32A 140W TO220AB
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXDP20N60B(D1)
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXDP20N60B
In stock: 38730 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXDP20N60B online

US$ 3.615

Reference Marketing Price: US$ 3.615

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

50+:
$3.615
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Test Condition 300V, 20A, 22 Ohm, 15V
Td (on/off) @ 25°C -
Switching Energy 900µJ (on), 400µJ (off)
Supplier Device Package TO-220AB
Series -
Power - Max 140W
Packaging Tube
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 21 Weeks
Manufacturer Part Number IXDP20N60B
Input Type Standard
IGBT Type NPT
Gate Charge 70nC
Expanded Description IGBT NPT 600V 32A 140W Through Hole TO-220AB
Description IGBT 600V 32A 140W TO220AB
Current - Collector Pulsed (Icm) 40A
Current - Collector (Ic) (Max) 32A

Others

Standard Package 50

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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