IXDP20N60BD1

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IXDP20N60BD1

EXSHINE Part Number:EX-IXDP20N60BD1
Manufacturer Part Number:IXDP20N60BD1
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 600V 32A 140W TO220AB
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXDP20N60B(D1)
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXDP20N60BD1
In stock: 85010 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXDP20N60BD1 online

US$ 4.276

Reference Marketing Price: US$ 4.276

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

50+:
$4.276
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Test Condition 300V, 20A, 22 Ohm, 15V
Td (on/off) @ 25°C -
Switching Energy 900µJ (on), 400µJ (off)
Supplier Device Package TO-220AB
Series -
Reverse Recovery Time (trr) 40ns
Power - Max 140W
Packaging Tube
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Manufacturer Part Number IXDP20N60BD1
Input Type Standard
IGBT Type NPT
Gate Charge 70nC
Expanded Description IGBT NPT 600V 32A 140W Through Hole TO-220AB
Description IGBT 600V 32A 140W TO220AB
Current - Collector Pulsed (Icm) 40A
Current - Collector (Ic) (Max) 32A

Others

Standard Package 50

You can choose the below payment options. Please contact our sales team if you have any questions.

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

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 Delivery time: 1-3 days.
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 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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