IXFH12N100Q

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IXFH12N100Q

EXSHINE Part Number:EX-IXFH12N100Q
Manufacturer Part Number:IXFH12N100Q
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 1000V 12A TO-247AD
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXFH/IXFT(12,10)N100Q
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXFH12N100Q
In stock: 91250 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 13.054

Reference Marketing Price: US$ 13.054

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

50+:
$13.054
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Product Parameter

Vgs(th) (Max) @ Id 5.5V @ 4mA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247AD (IXFH)
Series HiPerFET™
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 6A, 10V
Power Dissipation (Max) 300W (Tc)
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXFH12N100Q
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 1000V (1kV) 12A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Drain to Source Voltage (Vdss) 1000V (1kV)
Description MOSFET N-CH 1000V 12A TO-247AD
Current - Continuous Drain (Id) @ 25°C 12A (Tc)

Others

Standard Package 50

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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