IXFH12N120P

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IXFH12N120P

EXSHINE Part Number:EX-IXFH12N120P
Manufacturer Part Number:IXFH12N120P
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 1200V 12A TO-247
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXF(H,V)12N120P/S
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXFH12N120P
In stock: 34160 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXFH12N120P online

US$ 10.334

Reference Marketing Price: US$ 10.334

Our Best Price: N/A (Email us)

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Multiples:1

30+:
$10.334
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Product Parameter

Vgs(th) (Max) @ Id 6.5V @ 1mA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247AD (IXFH)
Series HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs 1.35 Ohm @ 500mA, 10V
Power Dissipation (Max) 543W (Tc)
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXFH12N120P
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 1200V (1.2kV) 12A (Tc) 543W (Tc) Through Hole TO-247AD (IXFH)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Description MOSFET N-CH 1200V 12A TO-247
Current - Continuous Drain (Id) @ 25°C 12A (Tc)

Others

Standard Package 30

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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