IXGP24N120C3

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IXGP24N120C3

EXSHINE Part Number:EX-IXGP24N120C3
Manufacturer Part Number:IXGP24N120C3
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 1200V 48A 250W TO220
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXG(A,H,P)24N120C3
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXGP24N120C3
In stock: 96290 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXGP24N120C3 online

US$ 4.914

Reference Marketing Price: US$ 4.914

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

50+:
$4.914
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 4.2V @ 15V, 20A
Test Condition 600V, 20A, 5 Ohm, 15V
Td (on/off) @ 25°C 16ns/93ns
Switching Energy 1.16mJ (on), 470µJ (off)
Supplier Device Package TO-220AB
Series GenX3™
Power - Max 250W
Packaging Tube
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXGP24N120C3
Input Type Standard
IGBT Type PT
Gate Charge 79nC
Expanded Description IGBT PT 1200V 48A 250W Through Hole TO-220AB
Description IGBT 1200V 48A 250W TO220
Current - Collector Pulsed (Icm) 96A
Current - Collector (Ic) (Max) 48A

Others

Standard Package 50

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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