IXGP2N100A

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IXGP2N100A

EXSHINE Part Number:EX-IXGP2N100A
Manufacturer Part Number:IXGP2N100A
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 1000V 4A 25W TO220AB
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXGP2N100(A)
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXGP2N100A
In stock: 54050 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXGP2N100A online

US$ 2.811

Reference Marketing Price: US$ 2.811

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

50+:
$2.811
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1000V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 2A
Test Condition 800V, 2A, 150 Ohm, 15V
Td (on/off) @ 25°C 15ns/300ns
Switching Energy 260µJ (off)
Supplier Device Package TO-220AB
Series -
Power - Max 25W
Packaging Tube
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXGP2N100A
Input Type Standard
IGBT Type -
Gate Charge 7.8nC
Expanded Description IGBT 1000V 4A 25W Through Hole TO-220AB
Description IGBT 1000V 4A 25W TO220AB
Current - Collector Pulsed (Icm) 8A
Current - Collector (Ic) (Max) 4A

Others

Standard Package 50

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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