IXGQ28N120B

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IXGQ28N120B

EXSHINE Part Number:EX-IXGQ28N120B
Manufacturer Part Number:IXGQ28N120B
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 1200V 50A 250W TO3P
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXGQ28N120B/BD1
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXGQ28N120B
In stock: 35760 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXGQ28N120B online

US$ 4.583

Reference Marketing Price: US$ 4.583

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

30+:
$4.583
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 28A
Test Condition 960V, 28A, 5 Ohm, 15V
Td (on/off) @ 25°C 30ns/180ns
Switching Energy 2mJ (off)
Supplier Device Package TO-3P
Series -
Power - Max 250W
Packaging Tube
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXGQ28N120B
Input Type Standard
IGBT Type -
Gate Charge 92nC
Expanded Description IGBT 1200V 50A 250W Through Hole TO-3P
Description IGBT 1200V 50A 250W TO3P
Current - Collector Pulsed (Icm) 150A
Current - Collector (Ic) (Max) 50A

Others

Standard Package 30

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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