IXGQ35N120BD1

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IXGQ35N120BD1

EXSHINE Part Number:EX-IXGQ35N120BD1
Manufacturer Part Number:IXGQ35N120BD1
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 1200V 75A 400W TO3P
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXGQ35N120BD1
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Weight:-
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Real Time Availability for
IXGQ35N120BD1
In stock: 68610 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 7.771

Reference Marketing Price: US$ 7.771

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$7.771
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 35A
Test Condition 960V, 35A, 3 Ohm, 15V
Td (on/off) @ 25°C 40ns/270ns
Switching Energy 900µJ (on), 3.8mJ (off)
Supplier Device Package TO-3P
Series -
Reverse Recovery Time (trr) 40ns
Power - Max 400W
Packaging Tube
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number IXGQ35N120BD1
Input Type Standard
IGBT Type -
Gate Charge 140nC
Expanded Description IGBT 1200V 75A 400W Through Hole TO-3P
Description IGBT 1200V 75A 400W TO3P
Current - Collector Pulsed (Icm) 200A
Current - Collector (Ic) (Max) 75A

Others

Standard Package 30

You can choose the below payment options. Please contact our sales team if you have any questions.

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
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 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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