IXTQ26N60P

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IXTQ26N60P

EXSHINE Part Number:EX-IXTQ26N60P
Manufacturer Part Number:IXTQ26N60P
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 600V 26A TO-3P
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXT(H,Q,T,V)26N60P(S)
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXTQ26N60P
In stock: 68370 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXTQ26N60P online

US$ 5.552

Reference Marketing Price: US$ 5.552

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Multiples:1

30+:
$5.552
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Product Parameter

Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3P
Series PolarHV™
Rds On (Max) @ Id, Vgs 270 mOhm @ 500mA, 10V
Power Dissipation (Max) 460W (Tc)
Packaging Tube
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXTQ26N60P
Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 600V 26A (Tc) 460W (Tc) Through Hole TO-3P
Drain to Source Voltage (Vdss) 600V
Description MOSFET N-CH 600V 26A TO-3P
Current - Continuous Drain (Id) @ 25°C 26A (Tc)

Others

Standard Package 30

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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