IXTQ30N60L2

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IXTQ30N60L2

EXSHINE Part Number:EX-IXTQ30N60L2
Manufacturer Part Number:IXTQ30N60L2
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 600V 30A TO-3P
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXT(H,Q,T)30N60L2
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXTQ30N60L2
In stock: 52590 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 11.461

Reference Marketing Price: US$ 11.461

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$11.461
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Product Parameter

Vgs(th) (Max) @ Id 4.5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3P
Series Linear L2™
Rds On (Max) @ Id, Vgs 240 mOhm @ 15A, 10V
Power Dissipation (Max) 540W (Tc)
Packaging Tube
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXTQ30N60L2
Input Capacitance (Ciss) (Max) @ Vds 10700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 335nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 600V 30A (Tc) 540W (Tc) Through Hole TO-3P
Drain to Source Voltage (Vdss) 600V
Description MOSFET N-CH 600V 30A TO-3P
Current - Continuous Drain (Id) @ 25°C 30A (Tc)

Others

Standard Package 30

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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