IXTQ36N30P

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IXTQ36N30P

EXSHINE Part Number:EX-IXTQ36N30P
Manufacturer Part Number:IXTQ36N30P
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 300V 36A TO-3P
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXT(A,P,Q)36N30P
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXTQ36N30P
In stock: 67800 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXTQ36N30P online

US$ 3.94

Reference Marketing Price: US$ 3.94

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$3.94
10+:
$3.518
25+:
$3.166
100+:
$2.884
250+:
$2.603
500+:
$2.336
1000+:
$1.97
2500+:
$1.871
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Product Parameter

Vgs(th) (Max) @ Id 5.5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3P
Series PolarHT™
Rds On (Max) @ Id, Vgs 110 mOhm @ 18A, 10V
Power Dissipation (Max) 300W (Tc)
Packaging Tube
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXTQ36N30P
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-3P
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 300V
Description MOSFET N-CH 300V 36A TO-3P
Current - Continuous Drain (Id) @ 25°C 36A (Tc)

Others

Standard Package 30

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If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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