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IPI086N10N3GXKSA1
| EXSHINE Part Number: | EX-IPI086N10N3GXKSA1 |
|---|---|
| Manufacturer Part Number: | IPI086N10N3GXKSA1 |
| Manufacturer / Brand: | Infineon Technologies |
| Brief Description: | MOSFET N-CH 100V 80A TO262-3 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | IPx08xN10N3 G |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
IPI086N10N3GXKSA1
In stock: 88281000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 88281000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
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Product Parameter
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO262-3 |
| Series | OptiMOS™ |
| Rds On (Max) @ Id, Vgs | 8.6 mOhm @ 73A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Other Names | IPI086N10N3 G IPI086N10N3 G-ND IPI086N10N3G SP000485982 SP000683070 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 14 Weeks |
| Manufacturer Part Number | IPI086N10N3GXKSA1 |
| Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Expanded Description | N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Description | MOSFET N-CH 100V 80A TO262-3 |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Others
| Other Names | IPI086N10N3 G IPI086N10N3 G-ND IPI086N10N3G SP000485982 SP000683070 |
|---|---|
| Standard Package | 500 |
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EMS EXPRESS Delivery time: 7-10 days. |
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