HN1B01FU-GR,LF

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HN1B01FU-GR,LF

EXSHINE Part Number:EX-HN1B01FU-GR,LF
Manufacturer Part Number:HN1B01FU-GR,LF
Manufacturer / Brand:Toshiba Semiconductor and Storage
Brief Description:TRANS NPN/PNP 50V 0.15A US6-PLN
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:HN1B01F
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
HN1B01FU-GR,LF
In stock: 19930000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 0.06

Reference Marketing Price: US$ 0.06

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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transistor Type NPN, PNP
Supplier Device Package US6
Series -
Power - Max 200mW, 210mW
Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names HN1B01FU-GR(L,F,T)
HN1B01FU-GR,LF(B
HN1B01FU-GR,LF(T
HN1B01FU-GRLF
HN1B01FU-GRLF-ND
HN1B01FUGRLFT
HN1B01FUGRLFTTR
HN1B01FUGRLFTTR-ND
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Manufacturer Part Number HN1B01FU-GR,LF
Frequency - Transition 150MHz
Expanded Description Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW, 210mW Surface Mount US6
Description TRANS NPN/PNP 50V 0.15A US6-PLN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

Others

Standard Package 3,000
Other Names HN1B01FU-GR(L,F,T)

HN1B01FU-GR,LF(B

HN1B01FU-GR,LF(T

HN1B01FU-GRLF

HN1B01FU-GRLF-ND

HN1B01FUGRLFT

HN1B01FUGRLFTTR

HN1B01FUGRLFTTR-ND

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- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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