HN1B01FU-Y(L,F,T)

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HN1B01FU-Y(L,F,T)

EXSHINE Part Number:EX-HN1B01FU-Y(L,F,T)
Manufacturer Part Number:HN1B01FU-Y(L,F,T)
Manufacturer / Brand:Toshiba Semiconductor and Storage
Brief Description:TRANS NPN/PNP 50V 0.15A US6
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:HN1B01F
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
HN1B01FU-Y(L,F,T)
In stock: 81964000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 0.42

Reference Marketing Price: US$ 0.42

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$0.42
10+:
$0.302
25+:
$0.235
100+:
$0.178
250+:
$0.126
500+:
$0.101
1000+:
$0.077
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Transistor Type NPN, PNP
Supplier Device Package US6
Series -
Power - Max 200mW
Packaging Cut Tape (CT)
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names HN1B01FU-Y(LFT)CT
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number HN1B01FU-Y(L,F,T)
Frequency - Transition 120MHz
Expanded Description Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6
Description TRANS NPN/PNP 50V 0.15A US6
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

Others

Standard Package 1
Other Names HN1B01FU-Y(LFT)CT

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Distributor of Toshiba Semiconductor and Storage

- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

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