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TPN1R603PL,L1Q
| EXSHINE Part Number: | EX-TPN1R603PL,L1Q |
|---|---|
| Manufacturer Part Number: | TPN1R603PL,L1Q |
| Manufacturer / Brand: | Toshiba Semiconductor and Storage |
| Brief Description: | X35 PB-F POWER MOSFET TRANSISTOR |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | TPN1R603PL |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
TPN1R603PL,L1Q
In stock: 12511000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 12511000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
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Product Parameter
| Vgs(th) (Max) @ Id | 10V @ 10µA |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Series | U-MOSIX-H |
| Rds On (Max) @ Id, Vgs | 1.2 mOhm @ 80A, 10V |
| Power Dissipation (Max) | 104W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Other Names | TPN1R603PL,L1Q(M TPN1R603PLL1Q TPN1R603PLL1QTR |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Manufacturer Standard Lead Time | 12 Weeks |
| Manufacturer Part Number | TPN1R603PL,L1Q |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Expanded Description | N-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Description | X35 PB-F POWER MOSFET TRANSISTOR |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Others
| Standard Package | 5,000 |
|---|---|
| Other Names | TPN1R603PL,L1Q(M TPN1R603PLL1Q TPN1R603PLL1QTR |
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