TPN22006NH,LQ

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TPN22006NH,LQ

EXSHINE Part Number:EX-TPN22006NH,LQ
Manufacturer Part Number:TPN22006NH,LQ
Manufacturer / Brand:Toshiba Semiconductor and Storage
Brief Description:MOSFET N CH 60V 9A 8-TSON
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:TPN22006NH
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
TPN22006NH,LQ
In stock: 33795000 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 0.335

Reference Marketing Price: US$ 0.335

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

3000+:
$0.335
6000+:
$0.312
15000+:
$0.30
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Product Parameter

Vgs(th) (Max) @ Id 4V @ 100µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Series U-MOSVIII-H
Rds On (Max) @ Id, Vgs 22 mOhm @ 4.5A, 10V
Power Dissipation (Max) 700mW (Ta), 18W (Tc)
Packaging Tape & Reel (TR)
Package / Case 8-PowerVDFN
Other Names TPN22006NH,LQ(S
TPN22006NHLQ
TPN22006NHLQTR
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Manufacturer Part Number TPN22006NH,LQ
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 60V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Drain to Source Voltage (Vdss) 60V
Description MOSFET N CH 60V 9A 8-TSON
Current - Continuous Drain (Id) @ 25°C 9A (Ta)

Others

Standard Package 3,000
Other Names TPN22006NH,LQ(S

TPN22006NHLQ

TPN22006NHLQTR

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