Photo for reference only Contact us for more images
EPC2001
| EXSHINE Part Number: | EX-EPC2001 |
|---|---|
| Manufacturer Part Number: | EPC2001 |
| Manufacturer / Brand: | EPC |
| Brief Description: | TRANS GAN 100V 25A BUMPED DIE |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | EPC2001 Datasheet |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
EPC2001
In stock: 83230 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 83230 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
- Description
- Payment
- Shipping
- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 2.5V @ 5mA |
|---|---|
| Vgs (Max) | +6V, -5V |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | Die Outline (11-Solder Bar) |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 25A, 5V |
| Power Dissipation (Max) | - |
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Other Names | 917-1014-2 |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | EPC2001 |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
| FET Type | N-Channel |
| FET Feature | - |
| Expanded Description | N-Channel 100V 25A (Ta) Surface Mount Die Outline (11-Solder Bar) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Drain to Source Voltage (Vdss) | 100V |
| Description | TRANS GAN 100V 25A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
Others
| Standard Package | 500 |
|---|---|
| Other Names | 917-1014-2 |
You can choose the below payment options. Please contact our sales team if you have any questions.
|
|
T/T (Bank Transfer) Receiving: 1-4 days. |
|
|
Paypal Receiving: immediately. |
|
|
Western Union Receiving: 1-2 hours. |
|
|
MoneyGram Receiving: 1-2 hours. |
|
|
Alipay Receiving: immediately. |
You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.
 |
DHL EXPRESS Delivery time: 1-3 days. |
 |
FEDEX EXPRESS Delivery time: 1-3 days. |
 |
UPS EXPRESS Delivery time: 2-4 days. |
 |
TNT EXPRESS Delivery time: 3-6 days. |
 |
EMS EXPRESS Delivery time: 7-10 days. |
Related Product
-
PictureMfg. Part NumberManufacturersBrief DescriptionDatasheetIn StockItem PriceOrder Online -
EPC20-010ORIGINALEPC20-010 ORIGINAL SMD or Through Hole New in stockViewInquiry -
EPC2-TI32ALTERAEPC2-TI32 ALTERA SMD or Through Hole New in stockViewInquiry -
EPC2001CEPCTRANS GAN 100V 36A BUMPED DIEDownloadViewUS$ 2.514Inquiry -
EPC2007CEPCTRANS GAN 100V 6A BUMPED DIEDownloadViewUS$ 0.901Inquiry -
EPC2014EPCTRANS GAN 40V 10A BUMPED DIEDownloadViewUS$ 0.846Inquiry -
EPC2-TI32NALTEPC2-TI32N ALT BGA New in stockViewInquiry -
EPC2012CEPCTRANS GAN 200V 5A BUMPED DIEDownloadViewUS$ 1.205Inquiry -
EPC2007EPCTRANS GAN 100V 6A BUMPED DIEDownloadViewUS$ 0.957Inquiry -
EPC1SI8ALTERAEPC1SI8 SOP Original Package StockViewInquiry -
EPC2010CENGREPCTRANS GAN 200V 22A BUMPED DIEDownloadViewUS$ 5.915Inquiry -
EPC2-TC32ALTERAEPC2-TC32 ALTERA QFP New in stockViewInquiry -
EPC20DMEGCEPC20 DMEGC CORE New in stockViewInquiry -
EPC1TC8ALTERAEPC1TC8 QFP Original Package StockViewInquiry -
EPC2ALTERASRAM-Based LUT Devices ICViewInquiry -
EPC2012CENGREPCTRANS GAN 200V 5A BUMPED DIEDownloadViewUS$ 1.148Inquiry -
EPC2010EPCTRANS GAN 200V 12A BUMPED DIEDownloadViewUS$ 7.998Inquiry -
EPC2010CEPCTRANS GAN 200V 22A BUMPED DIEDownloadViewUS$ 3.308Inquiry -
EPC2012EPCTRANS GAN 200V 3A BUMPED DIEDownloadViewUS$ 1.401Inquiry -
EPC1SI8NNAEPC1SI8N NA Original Package StockViewInquiry -
EPC1TI32ALTERAEPC1TI32 QFP Original Package StockViewInquiry
Distributor of EPC
- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.