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Real Time Availability for
EPC2010
In stock: 73960 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 73960 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
- Description
- Payment
- Shipping
- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
|---|---|
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 6A, 5V |
| Power Dissipation (Max) | - |
| Packaging | Cut Tape (CT) |
| Package / Case | Die |
| Other Names | 917-1016-1 |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | EPC2010 |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 5V |
| FET Type | N-Channel |
| FET Feature | - |
| Expanded Description | N-Channel 200V 12A (Ta) Surface Mount Die |
| Drain to Source Voltage (Vdss) | 200V |
| Description | TRANS GAN 200V 12A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Others
| Other Names | 917-1016-1 |
|---|---|
| Standard Package | 1 |
You can choose the below payment options. Please contact our sales team if you have any questions.
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T/T (Bank Transfer) Receiving: 1-4 days. |
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Paypal Receiving: immediately. |
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Western Union Receiving: 1-2 hours. |
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MoneyGram Receiving: 1-2 hours. |
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Alipay Receiving: immediately. |
You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.
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DHL EXPRESS Delivery time: 1-3 days. |
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FEDEX EXPRESS Delivery time: 1-3 days. |
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UPS EXPRESS Delivery time: 2-4 days. |
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TNT EXPRESS Delivery time: 3-6 days. |
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EMS EXPRESS Delivery time: 7-10 days. |
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Distributor of EPC
- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.