EPC2010CENGR

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EPC2010CENGR

EXSHINE Part Number:EX-EPC2010CENGR
Manufacturer Part Number:EPC2010CENGR
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 200V 22A BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2010C Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2010CENGR
In stock: 62580 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC2010CENGR online

US$ 5.915

Reference Marketing Price: US$ 5.915

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

2500+:
$5.915
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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 3mA
Technology GaNFET (Gallium Nitride)
Supplier Device Package Die Outline (7-Solder Bar)
Series eGaN®
Rds On (Max) @ Id, Vgs 25 mOhm @ 12A, 5V
Power Dissipation (Max) -
Packaging Tape & Reel (TR)
Package / Case Die
Other Names 917-EPC2010CENGRTR
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC2010CENGR
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 5V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 200V 22A (Ta) Surface Mount Die Outline (7-Solder Bar)
Drain to Source Voltage (Vdss) 200V
Description TRANS GAN 200V 22A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 22A (Ta)

Others

Other Names 917-EPC2010CENGRTR
Standard Package 500

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 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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