EPC2016

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EPC2016

EXSHINE Part Number:EX-EPC2016
Manufacturer Part Number:EPC2016
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 100V 11A BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:EPC2016
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC2016
In stock: 35710 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 1.33

Reference Marketing Price: US$ 1.33

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Multiples:1

2500+:
$1.33
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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 3mA
Technology GaNFET (Gallium Nitride)
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 16 mOhm @ 11A, 5V
Power Dissipation (Max) -
Packaging Tape & Reel (TR)
Package / Case Die
Other Names 917-1027-2
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC2016
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 100V 11A (Ta) Surface Mount Die
Drain to Source Voltage (Vdss) 100V
Description TRANS GAN 100V 11A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 11A (Ta)

Others

Other Names 917-1027-2
Standard Package 2,500

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Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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