GP1M009A090N

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GP1M009A090N

EXSHINE Part Number:EX-GP1M009A090N
Manufacturer Part Number:GP1M009A090N
Manufacturer / Brand:Global Power Technologies Group
Brief Description:MOSFET N-CH 900V 9.5A TO3PN
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:GP1M009A090N
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
GP1M009A090N
In stock: 81770 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 1.059

Reference Marketing Price: US$ 1.059

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$1.059
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Product Parameter

Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PN
Series -
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 4.75A, 10V
Power Dissipation (Max) 312W (Tc)
Packaging Tube
Package / Case TO-3P-3, SC-65-3
Other Names 1560-1174-1
1560-1174-1-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number GP1M009A090N
Input Capacitance (Ciss) (Max) @ Vds 2324pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 900V 9.5A (Tc) 312W (Tc) Through Hole TO-3PN
Drain to Source Voltage (Vdss) 900V
Description MOSFET N-CH 900V 9.5A TO3PN
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)

Others

Other Names 1560-1174-1

1560-1174-1-ND
Standard Package 1

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Distributor of Global Power Technologies Group

- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.

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