GP1M011A050HS

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GP1M011A050HS

EXSHINE Part Number:EX-GP1M011A050HS
Manufacturer Part Number:GP1M011A050HS
Manufacturer / Brand:Global Power Technologies Group
Brief Description:MOSFET N-CH 500V 10A TO220
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:GP1M011A050HS, FSH
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
GP1M011A050HS
In stock: 55090 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order GP1M011A050HS online

US$ 1.094

Reference Marketing Price: US$ 1.094

Our Best Price: N/A (Email us)

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Multiples:1

2000+:
$1.094
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Product Parameter

Vgs(th) (Max) @ Id 3.5V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Series -
Rds On (Max) @ Id, Vgs 700 mOhm @ 5A, 10V
Power Dissipation (Max) 158W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number GP1M011A050HS
Input Capacitance (Ciss) (Max) @ Vds 1546pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 500V 10A (Tc) 158W (Tc) Through Hole TO-220
Drain to Source Voltage (Vdss) 500V
Description MOSFET N-CH 500V 10A TO220
Current - Continuous Drain (Id) @ 25°C 10A (Tc)

Others

Standard Package 2,000

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Distributor of Global Power Technologies Group

- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.

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