GaN-on-Si RF power transistor hits 500W for radar

Called MAGX-101214-500, greater than 70% power efficiency is claimed during 50V pulsed operation.

“Supplied in a small-footprint ceramic flanged package and supporting matching structures that minimise circuit size, MAGX-101214-500 transistors help to enable rugged, compact radar systems underpinned with efficient, simplified cooling and power supply architectures,” said the firm.

The transistor is on-show at European Microwave Week (EuMW) in Nuremberg – booth 200.

Products are sampling now, with production release planned in the first half of next year.