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MMDF2C03HDR2G
| EXSHINE Part Number: | EX-MMDF2C03HDR2G |
|---|---|
| Manufacturer Part Number: | MMDF2C03HDR2G |
| Manufacturer / Brand: | AMI Semiconductor / ON Semiconductor |
| Brief Description: | MOSFET N/P-CH 30V 4.1A/3A 8SOIC |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | MMDF2C03HD |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
MMDF2C03HDR2G
In stock: 80860 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 80860 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
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- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | 3V @ 250µA |
|---|---|
| Supplier Device Package | 8-SOIC |
| Series | - |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 3A, 10V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Other Names | MMDF2C03HDR2GOS MMDF2C03HDR2GOS-ND MMDF2C03HDR2GOSTR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | MMDF2C03HDR2G |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 24V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Expanded Description | Mosfet Array N and P-Channel 30V 4.1A, 3A 2W Surface Mount 8-SOIC |
| Drain to Source Voltage (Vdss) | 30V |
| Description | MOSFET N/P-CH 30V 4.1A/3A 8SOIC |
| Current - Continuous Drain (Id) @ 25°C | 4.1A, 3A |
Others
| Other Names | MMDF2C03HDR2GOS MMDF2C03HDR2GOS-ND MMDF2C03HDR2GOSTR |
|---|---|
| Standard Package | 2,500 |
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