CGHV27015S

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CGHV27015S

EXSHINE Part Number:EX-CGHV27015S
Manufacturer Part Number:CGHV27015S
Manufacturer / Brand:Cree
Brief Description:RF MOSFET HEMT 50V 12VFDFN
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:CGHV27015S
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
CGHV27015S
In stock: 61110 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order CGHV27015S online

US$ 33.83

Reference Marketing Price: US$ 33.83

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

250+:
$33.83
  • Description
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  • Packaging

Product Parameter

Voltage - Test 50V
Voltage - Rated 125V
Transistor Type HEMT
Supplier Device Package 12-DFN (4x3)
Series GaN
Power - Output 15W
Packaging Tape & Reel (TR)
Package / Case 12-VFDFN Exposed Pad
Other Names CGHV27015STR
Noise Figure -
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Manufacturer Part Number CGHV27015S
Gain 21dB
Frequency 6GHz
Expanded Description RF Mosfet HEMT 50V 60mA 6GHz 21dB 15W 12-DFN (4x3)
Description RF MOSFET HEMT 50V 12VFDFN
Current Rating -
Current - Test 60mA

Others

Standard Package 250
Other Names CGHV27015STR

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Distributor of Cree/Wolfspeed

- Cree leads the LED lighting revolution and is making energy-wasting traditional lighting technologies obsolete through the use of energy-efficient, environmentally friendly LED lighting. Cree first brought the blue LED to market in 1989, and today Cree's XLamp® LEDs have continually exceeded industry standards for brightness and efficiency. Indeed, XLamp LEDs were the first "lighting-class" LEDs – LEDS bright enough to be used in general-illumination applications, such as desk lamps, ceiling fixtures and street lights. In addition, Cree's extensive line of high-brightness LEDs are also introducing new performance levels to outdoor video displays and decorative lighting.
Cree’s power and RF division is now known as Wolfspeed, A Cree Company. Wolfspeed is liberating power and wireless systems from the limitations of silicon by leading the innovation and commercialization of next-generation systems based on silicon carbide and gallium nitride.

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