EPC8002ENGR

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EPC8002ENGR

EXSHINE Part Number:EX-EPC8002ENGR
Manufacturer Part Number:EPC8002ENGR
Manufacturer / Brand:EPC
Brief Description:TRANS GAN 65V 2A BUMPED DIE
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:eGaN® FET BriefEPC8002 Datasheet
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
EPC8002ENGR
In stock: 35980 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order EPC8002ENGR online

US$ 15.385

Reference Marketing Price: US$ 15.385

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

100+:
$15.385
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Product Parameter

Vgs(th) (Max) @ Id 2.5V @ 250µA
Technology GaNFET (Gallium Nitride)
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 530 mOhm @ 500mA, 5V
Power Dissipation (Max) -
Packaging Tray
Package / Case Die
Other Names 917-EPC8002ENGR
EPC8002ENGI
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number EPC8002ENGR
Input Capacitance (Ciss) (Max) @ Vds 21pF @ 32.5V
Gate Charge (Qg) (Max) @ Vgs 0.14nC @ 5V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 65V 2A (Ta) Surface Mount Die
Drain to Source Voltage (Vdss) 65V
Description TRANS GAN 65V 2A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C 2A (Ta)

Others

Other Names 917-EPC8002ENGR

EPC8002ENGI
Standard Package 10

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 Delivery time: 1-3 days.
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 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
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 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of EPC

- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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