IXBH5N160G

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IXBH5N160G

EXSHINE Part Number:EX-IXBH5N160G
Manufacturer Part Number:IXBH5N160G
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 1600V 5.7A 68W TO247AD
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXB(P,H)5N160G
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXBH5N160G
In stock: 80620 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXBH5N160G online

US$ 5.41

Reference Marketing Price: US$ 5.41

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

30+:
$5.41
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 1600V
Vce(on) (Max) @ Vge, Ic 7.2V @ 15V, 3A
Test Condition 960V, 3A, 47 Ohm, 10V
Td (on/off) @ 25°C -
Switching Energy -
Supplier Device Package TO-247AD (IXBH)
Series BIMOSFET™
Power - Max 68W
Packaging Tube
Package / Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXBH5N160G
Input Type Standard
IGBT Type -
Gate Charge 26nC
Expanded Description IGBT 1600V 5.7A 68W Through Hole TO-247AD (IXBH)
Description IGBT 1600V 5.7A 68W TO247AD
Current - Collector Pulsed (Icm) -
Current - Collector (Ic) (Max) 5.7A

Others

Standard Package 30

You can choose the below payment options. Please contact our sales team if you have any questions.

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 Receiving: 1-4 days.

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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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