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IXGN400N60B3

EXSHINE Part Number:EX-IXGN400N60B3
Manufacturer Part Number:IXGN400N60B3
Manufacturer / Brand:IXYS Corporation
Brief Description:IGBT 600V 430A SOT-227
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXGN400N60B3
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXGN400N60B3
In stock: 61250 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXGN400N60B3 online

US$ 37.646

Reference Marketing Price: US$ 37.646

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$37.646
  • Description
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Product Parameter

Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 100A
Supplier Device Package SOT-227B
Series GenX3™
Power - Max 1000W
Package / Case SOT-227-4, miniBLOC
Operating Temperature -55°C ~ 150°C (TJ)
NTC Thermistor No
Mounting Type Chassis Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXGN400N60B3
Input Capacitance (Cies) @ Vce 31nF @ 25V
Input Standard
IGBT Type PT
Expanded Description IGBT Module PT Single 600V 430A 1000W Chassis Mount SOT-227B
Description IGBT 600V 430A SOT-227
Current - Collector Cutoff (Max) 100µA
Current - Collector (Ic) (Max) 430A
Configuration Single

Others

Standard Package 10

You can choose the below payment options. Please contact our sales team if you have any questions.

 T/T (Bank Transfer)
 Receiving: 1-4 days.

 Paypal
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 MoneyGram
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You can choose the below shipping options, contact our sales team to check the shipping cost to your address.
If you don't want to use our shipping service, you can also arrange pick up from our warehouse or ship by your courier account.

 DHL EXPRESS
 Delivery time: 1-3 days.
 FEDEX EXPRESS
 Delivery time: 1-3 days.
 UPS EXPRESS
 Delivery time: 2-4 days.
 TNT EXPRESS
 Delivery time: 3-6 days.
 EMS EXPRESS
 Delivery time: 7-10 days.


Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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