IXTA1R4N120P

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IXTA1R4N120P

EXSHINE Part Number:EX-IXTA1R4N120P
Manufacturer Part Number:IXTA1R4N120P
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 1200V 1.4A TO-263
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXT(A,P)1R4N120P
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXTA1R4N120P
In stock: 24270 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

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US$ 3.402

Reference Marketing Price: US$ 3.402

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Multiples:1

50+:
$3.402
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Product Parameter

Vgs(th) (Max) @ Id 4.5V @ 100µA
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263 (IXTA)
Series Polar™
Rds On (Max) @ Id, Vgs 13 Ohm @ 500mA, 10V
Power Dissipation (Max) 86W (Tc)
Packaging Tube
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Manufacturer Part Number IXTA1R4N120P
Input Capacitance (Ciss) (Max) @ Vds 666pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 24.8nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 1200V (1.2kV) 1.4A (Tc) 86W (Tc) Surface Mount TO-263 (IXTA)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Description MOSFET N-CH 1200V 1.4A TO-263
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)

Others

Standard Package 50

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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