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IXTH6N100D2
| EXSHINE Part Number: | EX-IXTH6N100D2 |
|---|---|
| Manufacturer Part Number: | IXTH6N100D2 |
| Manufacturer / Brand: | IXYS Corporation |
| Brief Description: | MOSFET N-CH 1000V 6A TO247 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Condition: | New and unused, Original |
| Datasheet Download: | IXT(A,P,H)6N100D2 |
| Application: | - |
| Weight: | - |
| Alternative Replacement: | - |
Real Time Availability for
IXTH6N100D2
In stock: 76200 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
In stock: 76200 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks
- Description
- Payment
- Shipping
- Packaging
Product Parameter
| Vgs(th) (Max) @ Id | - |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-247 (IXTH) |
| Series | - |
| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 3A, 0V |
| Power Dissipation (Max) | 300W (Tc) |
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 10 Weeks |
| Manufacturer Part Number | IXTH6N100D2 |
| Input Capacitance (Ciss) (Max) @ Vds | 2650pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 5V |
| FET Type | N-Channel |
| FET Feature | Depletion Mode |
| Expanded Description | N-Channel 1000V (1kV) 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Description | MOSFET N-CH 1000V 6A TO247 |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Others
| Standard Package | 30 |
|---|
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DHL EXPRESS Delivery time: 1-3 days. |
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FEDEX EXPRESS Delivery time: 1-3 days. |
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UPS EXPRESS Delivery time: 2-4 days. |
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TNT EXPRESS Delivery time: 3-6 days. |
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EMS EXPRESS Delivery time: 7-10 days. |
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Distributor of IXYS
- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.