IXTP3N120

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IXTP3N120

EXSHINE Part Number:EX-IXTP3N120
Manufacturer Part Number:IXTP3N120
Manufacturer / Brand:IXYS Corporation
Brief Description:MOSFET N-CH 1.2KV 3A TO-220AB
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Condition:New and unused, Original
Datasheet Download:IXT(A,P)3N120
Application:-
Weight:-
Alternative Replacement:-
Real Time Availability for
IXTP3N120
In stock: 81530 pcs can ship in 1-2 days.
Future Stock: 12000 pcs in 7-10 days.
Manufacturer Lead time: 8-10 Weeks

Click below to order IXTP3N120 online

US$ 6.67

Reference Marketing Price: US$ 6.67

Our Best Price: N/A (Email us)

Minimum:1

Multiples:1

1+:
$6.67
10+:
$5.959
25+:
$5.363
100+:
$4.886
250+:
$4.409
500+:
$3.957
1000+:
$3.337
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Product Parameter

Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series HiPerFET™
Rds On (Max) @ Id, Vgs 4.5 Ohm @ 500mA, 10V
Power Dissipation (Max) 200W (Tc)
Packaging Tube
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Manufacturer Standard Lead Time 4 Weeks
Manufacturer Part Number IXTP3N120
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
FET Type N-Channel
FET Feature -
Expanded Description N-Channel 1200V (1.2kV) 3A (Tc) 200W (Tc) Through Hole TO-220AB
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Description MOSFET N-CH 1.2KV 3A TO-220AB
Current - Continuous Drain (Id) @ 25°C 3A (Tc)

Others

Standard Package 50

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Distributor of IXYS

- IXYS Corporation offers a broad line of High Power Semiconductors, including low on-resistance Power MOSFETs, ultra fast switching IGBTs, Fast Recovery Diodes (FREDs), SCR and Diode Modules, Rectifier Bridges, and Power Interface ICs.

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